Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal-oxide-silicon field-effect transistors

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1575-1580

  Trabzon, L ^a   Awadelkarim, O O ^a   Werking, J ^a,b   Bersuker, G ^a,b   Chan, Y D ^a,b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038003193     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363892     Document Type: Review

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