Integration and Reliability Issues of Cu/SiOC Interconnect for ArF/90nm Node SoC Manufacturing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 527-530

  Noguchi, J ^a   Oshima, T ^a   Tanaka, U ^a   Sasajima, K ^a   Aoki, H ^a   Sato, K ^a   Ishikawa, K ^a   Saito, T ^a   Konishi, N ^a   Hotta, S ^a   Uno, S ^a   Kikushima, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COPPER; DELAMINATION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC PROPERTIES; ELECTROMIGRATION; INTERFACES (MATERIALS); OPTIMIZATION; PLASMAS; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; THERMAL STRESS;

INTERCONNECT TECHNOLOGY; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

SILICON COMPOUNDS;

EID: 17644449286     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H.Aoki et al., Proceedings of IEDM 2001, pp.76-79.
2. T. Furusawa et al., Proceedings of IITC 2003, pp.195-197.
3. T. Oshima et al., Proceedings of IEDM 2002, pp.757-760.
4. J.Noguchi et al., Proceedings of IRPS 2000, pp.339-343.