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Volumn 170, Issue 1-4, 1997, Pages 219-224

Effects of growth temperature and V/III ratio on surface structure and ordering in Ga0.5In0.5P

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACES; THERMAL EFFECTS;

EID: 0030654582     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00556-8     Document Type: Article
Times cited : (21)

References (18)
  • 4
    • 0027915649 scopus 로고
    • Eds. P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill and T. Kuech (Materials Research Society, Pittsburg)
    • G.B. Stringfellow, in: Common Themes and Mechanisms of Epitaxial Growth, Eds. P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill and T. Kuech (Materials Research Society, Pittsburg, 1993) pp. 35-46.
    • (1993) Common Themes and Mechanisms of Epitaxial Growth , pp. 35-46
    • Stringfellow, G.B.1
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.