Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (4 1 1)A super-flat interfaces

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 90-95

  Watanabe, Issei ^a   Kanzaki, Kenji ^a   Kitada, Takahiro ^a   Yamamoto, Masashi ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B2. Semiconducting indium compounds; B3. High electron mobility transistors

Indexed keywords

ELECTRON GAS; ELECTRON SCATTERING; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GATE CONTACT;

SURFACE ROUGHNESS;

EID: 0037382831     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02422-3     Document Type: Conference Paper

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