Super-flat interfaces in pseudomorphic in0.72Ga0.28An/In0.52Al0.48As quantum wells grown on (411) A InP substrates by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1598-1600

  Aoki, Toyohiro ^a   Kitada, Takahiro ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

INDIUM ALUMINUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034186965     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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