Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (4 1 1)A super-flat interfaces grown by MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 289-293

  Kitada, Takahiro ^a   Aoki, Toyohiro ^a   Watanabe, Issei ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials; B3. High electron mobility transistors

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON MOBILITY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

INDIUM ALUMINUM ARSENIDE; PSEUDOMORPHIC QUANTUM WELL HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035398651     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00707-2     Document Type: Conference Paper

References (24)