Selective wet-etching of InGaAs on InAlAs using adipic acid and its application to InAlAs/InGaAs HEMTs

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 475-480

  Higuchi, K ^a   Uchiyama, H ^a   Shiota, T ^a   Kudo, M ^a   Mishima, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SOLUBILITY; TRANSCONDUCTANCE;

ADIPIC ACID; WET ETCHING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031118129     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/024     Document Type: Article

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