Fabrication of deep single trenches from N-type macroporous silicon

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 283-287

  Gautier, G ^a   Ventura, L ^a   Pordie T ^a   Rogel, R ^b   Jerisian R ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Electrochemical etching; Macropores; Porous silicon; Trench

Indexed keywords

BORON; COMPUTER SIMULATION; CORROSION; CURRENT DENSITY; DIFFUSION; ETCHING; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CURRENT DENSITY DISTRIBUTIONS; ELECTROCHEMICAL ETCHING; MACROPORES; TRENCHES;

POROUS SILICON;

EID: 22944456149     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.080     Document Type: Conference Paper

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