Macroporous-based micromachining on full wafers

Sensors and Actuators, A: Physical

Volumn 92, Issue 1-3, 2001, Pages 384-387

  Ohji, H ^a   Izuo, S ^a   French, P J ^b   Tsutsumi, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electrochemical etching; Etching equipment; Uniformity; Wet etching

Indexed keywords

ELECTROCHEMISTRY; ELECTROLYTES; ETCHING; MICROMACHINING; POROUS MATERIALS; SILICON WAFERS; STRUCTURE (COMPOSITION); THREE DIMENSIONAL;

ELECTROCHEMICAL ETCHING; ETCHING EQUIPMENT; FULL WAFER; MACROPOROUS BASED MICROMACHINING; WET ETCHING;

MICROELECTRONIC PROCESSING;

EID: 0035426099     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00576-3     Document Type: Article

References (6)

1. Using porous silicon as a sacrificial layer
2. Porous silicon as a sacrificial material
3. Porous silicon - A new material for MEMS
4. Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid
5. Fabrication of accelerometer using single-step electrochemical etching for microstructures (SEEMS)
6. Macroporous silicon formation for micromachining