High quality homoepitaxial diamond films grown in end-launch type reactors

Materials Research Society Symposium - Proceedings

Volumn 416, Issue , 1996, Pages 217-222

  Hayashi, Kazushi ^a   Yamanaka, Sadanori ^a   Okushi, Hideyo ^a   Kajimura, Koji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; IMPURITIES; MORPHOLOGY; OPTICAL MICROSCOPY; SPECTROSCOPY; SUBSTRATES; SURFACES;

END LAUNCH TYPE CHEMICAL VAPOR DEPOSITION; HOMOEPITAXIAL DIAMOND FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY CONTACT PROPERTIES; SECONDARY ION MASS SPECTROSCOPY;

DIAMOND FILMS;

EID: 0029778723     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)