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Volumn 14, Issue 8, 2005, Pages 1377-1388

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition

Author keywords

Adsorption energy; Chemical vapor deposition; Diamond; Intermediate layer; Nucleation; Silicon carbide

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS); NUCLEATION; SILICON CARBIDE; THICKNESS MEASUREMENT;

EID: 22844442677     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.02.008     Document Type: Conference Paper
Times cited : (19)

References (94)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.