Microwave plasma CVD of high quality heteroepitaxial diamond films

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 185-195

  Jubber, M G ^a   Milne, D K ^a,b  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b SEAGATE TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

FILM THICKNESS; HETEROEPITAXIAL DIAMOND FILMS; LASER IONISATION MASS ANALYSIS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE LAYER;

DIAMOND FILMS;

EID: 0030108708     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540115     Document Type: Article

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