On the mechanisms of bias enhanced nucleation of diamond

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 155-174

  Kulisch, W ^a   Ackermann, L ^a   Sobisch, B ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION EFFECTS; DIAMOND FILMS; ELECTRIC VARIABLES MEASUREMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; REACTION KINETICS; SEMICONDUCTING SILICON; SURFACES; THERMAL EFFECTS;

BIAS ENHANCED NUCLEATION; BIAS VOLTAGE; CARBON CONCENTRATION; DIAMOND COATED SURFACES; STRESS MEASUREMENTS; SURFACE BOMBARDMENT;

NUCLEATION;

EID: 0030108990     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540113     Document Type: Article

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