Study on microstructure and semiconducting properties of doped c-BN-containing films

Surface and Coatings Technology

Volumn 141, Issue 2-3, 2001, Pages 216-219

  Liao, K J ^a   Wang, W L ^a   Kong, C Y ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

c BN films; Mobility; Plasma chemical vapor deposition (CVD); Semiconducting properties

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LOSS SPECTROSCOPY; FILM GROWTH; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SUBSTRATES; THIN FILMS;

INFRARED ABSORPTION;

SEMICONDUCTING FILMS;

FILM;

EID: 0035907541     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(01)01231-2     Document Type: Article

References (14)