InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1136-1138

  Chin, T P ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449516     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590708     Document Type: Article

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