InGaP/GaAs/lnGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2225-2228

  Chin, T P ^a   Chang, J C P ^a   Woodall, J M ^a   Chen, W L ^b,c   Haddad, G I ^b  

^a PURDUE UNIVERSITY   (United States)

^b The Department of Civil and Environmental Engineering   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002997828     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. G. W. Wicks, M. W. Koch, J. A. Varriano, F. G. Johnson, C. R. Wie, H. M. Kim, and P. Colombo, Appl. Phys. Lett. 59, 342 (1991).
2. D. J. Mowbray, O. P. Kowalski, M. S. Skolnick, M. C. DeLong, M. Hopkinson, J. P. R. David, and A. G. Cullis, J. Appl. Phys. 75, 2029 (1994).
3. D. J. Mowbray, O. P. Kowalski, M. Hopkinson, and M. S. Skolnick, Appl. Phys. Lett. 65, 213 (1994).
4. J. N. Baillargeon, A. Y. Cho, F. A. Thiel, R. J. Fischer, P. J. Pearah, and K. Y. Cheng, Appl. Phys. Lett. 65, 207 (1994).
5. T. P. Chin, J. C. P. Chang, J. M. Woodall, W. L. Chen, G. I. Haddad, C. Parks, and A. K. Ramdas, J. Vac. Sci. Technol. B 13, 750 (1995).
6. T. P. Chin, J. M. Woodall, W. L. Chen, and G. I. Haddad, presented in 1995 Electronic Material Conference (unpublished).
7. W. E. Hoke et al., J. Vac. Sci. Technol. B 13, 733 (1995).
8. J. A. Varriano et al., Proc. SPIE 1788, 21 (1992).
9. T. Liu, C. Nguyen, and H-C. Sun, presented at the 1995 Electronic Materials Conference, Charlottesville, VA, June 1995 (unpublished), p. A8, paper E3.
10. J. Cowles, L. Tran, T. Block, D. Streit, and A. Oki, presented at the 53th Annual Device Research Conference, Charlottesville, VA, June 1995 (unpublished), p. 84, IVA-4.
11. C. Nguyen, H-C. Sun, and T. Liu, in Ref. 10, p. 82, IVA-3.