InGaP/GaAs/lnGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2225-2228

  Chin, T P ^a   Chang, J C P ^a   Woodall, J M ^a   Chen, W L ^b,c   Haddad, G I ^b  

^a PURDUE UNIVERSITY   (United States)

^b University of Michigan   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002997828     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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