Molecular beam epitaxy growth and characterization of InGaAIAs-collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdown

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2221-2224

  Block, T R ^a   Wojtowicz, M ^a   Cowles, J ^a   Tran, L ^a   Oki, A K ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042915291     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. K. W. Kobayashi, L. T. Tran, S. Bui, J. Velebir, D. Nguyen, A. K. Oki, and D. C. Streit, IEEE 1993 Microwave and Millimeter-wave Monolithic Circuits Symposium Digest, 1993 (unpublished), p. 85.
2. H. F. Chau, D. Pavlidis, J. Hu, and K. Tomizawa, IEEE Trans. Electron Devices 40, 1 (1993).
3. M. Hafizi, T. Liu, P. A. Macdonald, M. Lui, P. Chu, D. B. Rensch, W. E. Stanchina, and C. S. Wu, Proc. IEDM 93, 791 (1993).
4. K. Kurishima, H. Nakajima, T. Kobayashi, Y. Matsuoka, and T. Ishibashi, Appl. Phys. Lett. 62, 2372 (1993).
5. R. F. Kopf, H. P. Wei, A. P. Perley, and G. Livescu, Appl. Phys. Lett, 60, 2386 (1992).
6. M. Wojtowicz, T. R. Block, J. Cowles, L. Tran, A. K. Oki, and D. C. Streit (unpublished).