InP/InGaAs single heterojunction bipolar transistors grown by solid-source molecular beam epitaxy using a phosphorus valved cracker

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2739-2741

  Chen, W L ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348227347     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589012     Document Type: Article

References (7)

1. Y. K. Chen, R. N. Nottenburg, M. B. Panish, R. A. Hamm, and D. A. Humphrey, IEEE Electron Device Lett. EDL-10, 267 (1989).
2. H. F. Chau and E. A. Beam, IEEE Electron Device Lett. 14, 388 (1993).
3. J. C. Cowles, W. L. Chen, G. O. Munns, and G. I. Haddad, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, 2-4 August 1993 (unpublished), p. 62.
4. M. Ida, S. Yamahata, K. Kurishima, H. Ito, T. Kobayashi, and Y. Matsuoka, High-finax InP/InGaAs HBTs with Extrinsic Base Layers Selectively Grown by MOCVD, the proceedings of 1995 IEEE 53rd annual device research conference, June 19-21, 1995, Charlottesville, Virginia, p. 78.
5. Willen, H. Asonen, and M. Toivonen, Electron. Lett. 31, 1514 (1995).
6. Application Note of EPI MBE Products Group, State-of-the-Art Device Results Using EPI Valved Crackers for Phosphorus and Arsenic, Note No. 5/95, September 1995.
7. T. P. Chin, W. L. Chen, G. I. Haddad, and J. M. Woodall, J. Vac. Sci. Technol. B 13, 750 (1995).