Reliable ICs fabricated using a production GaAs HBT process for military and commercial applications

Proceedings - IEEE Military Communications Conference MILCOM

Volumn 2, Issue , 1995, Pages 760-764

  Yamada, F M ^a   Oki, A K ^a   Streit, D C ^a   Umemoto, D K ^a   Tran, L T ^a   Kobayashi, K W ^a   Grossman, P C ^a   Block, T R ^a   Lammert, M D ^a   Olson, S R ^a   Cowles, J C ^a   Hoppe, M M ^a   Bui, S B ^a   Smith, D M ^a   Najita, K ^a   et al , ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; LOGARITHMIC AMPLIFIERS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

BORON IMPLANTATION; PRODUCTION PROCESS; SELF ALIGNED BASED OHMIC METAL FABRICATION; SOLID SOURCE MOLECULAR BEAM EPITAXY; THIN FILM RESISTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029532196     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)