Characterization of surface imperfections of silicon-on-insulator wafers by means of extremely asymmetric x-ray reflection topography

Applied Physics Letters

Volumn 68, Issue 5, 1996, Pages 693-695

  Kimura, Shigeru ^a   Ogura, Atsushi ^a   Ishikawa, Tetsuya ^b  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006206659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116594     Document Type: Article

References (6)

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4. H. Gassel, J. Peter-Weidemann, and H. Vogt, in Silicon on Insulator Technology and Devices, edited by W. E. Bailey (The Electrochemical Society, Pennington, 1992), p. 251.
5. T. Matsushita, T. Ishikawa, and H. Oyanagi, Nucl. Instrum. Methods A INS 246, 377 (1986).
6. T. Abe, A. Uchiyama, and Y. Nakazato, in Semiconductor Wafer Bonding: Science, Technology, and Applications, edited by U. Gösele, T. Abe, J. Haisma and M. A. Schmidt (The Electrochemical Society, Pennington, 1991), p. 200.