Efficiency of multiple atom doping in wide band gap semiconductors

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Miyazaki, Takehide ^a   Yamasaki, Satoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CARRIER CONCENTRATION; DEFECTS; DOPING (ADDITIVES); ELECTRON BEAMS; ENTROPY; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; OPTOELECTRONIC DEVICES; THERMODYNAMICS;

DIELECTRIC SCREENING; FORMATION ENERGY; MULTIPLE ATOM DOPING; WIDE BAND GAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 22144493838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977207     Document Type: Article

References (21)

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20. Wn = 1 Nn ! [(N0 +n Nn) (1-n) nn z (z-1)(n-2) σ] Nn { [(N0 +n Nn) n] ! (N0 n) ! }n, where z and σ are the nearest-neighbor number and symmetry number, respectively. Here we assume σ=1. For derivation of Wn, see, R. Kubo, Exercises of Statistical Physics (in Japanese), 33rd ed. (Shokabo, Tokyo, 1989), p. 400. Although Flory's approximation has been originally developed for one dimensional high polymers, its use may be justified in dilution cases (x∼ 10-6). See also A. J. Ramirez-Pastor, T. P. Eggarter, V. D. Pereyra, and J. L. Riccardo, Phys. Rev. B 59, 11027 (1999)).
21. Wn = 1 Nn ! [(N0 +n Nn) (1-n) nn z (z-1)(n-2) σ] Nn { [(N0 +n Nn) n] ! (N0 n) ! }n, where z and σ are the nearest-neighbor number and symmetry number, respectively. Here we assume σ=1. For derivation of Wn, see, R. Kubo, Exercises of Statistical Physics (in Japanese), 33rd ed. (Shokabo, Tokyo, 1989), p. 400. Although Flory's approximation has been originally developed for one dimensional high polymers, its use may be justified in dilution cases (x∼ 10-6). See also A. J. Ramirez-Pastor, T. P. Eggarter, V. D. Pereyra, and J. L. Riccardo, Phys. Rev. B 59, 11027 (1999)).