Time-dependent dielectric breakdown of SiO2 films in a wide electric field range

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 47-52

  Teramoto, A ^a   Umeda, H ^a   Azamawari, K ^b   Kobayashi, K ^a   Shiga, K ^a   Komori, J ^a   Ohno, Y ^a   Shigetomi, A ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b 4 1 Mizuhara Itami 664 8641   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC FILMS; HOLE TRAPS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

TIME-DEPENDENT DIELECTRIC BREAKDOWN;

MOS DEVICES;

EID: 0035151281     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00095-0     Document Type: Article

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