980 nm small aperture tapered laser (1W CW, M2 ∼3) and tapered arrays (>3W CW): Comparison between GaInAs/(Al)GaAs quantum dot and quantum well structures

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5738, Issue , 2005, Pages 355-364

  Michel, N ^a   Calligaro, M ^a   Krakowski, M ^a   Deubert, S ^b   Reithmaier, J P ^b   Forchel, A ^b  

^a ALCATEL THALES III V LAB   (France)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; LIGHT AMPLIFIERS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

TAPERED LASERS; THRESHOLD CURRENT DENSITY; WAVEGUIDE GEOMETRY; WAVELENGTH STABILITY;

SEMICONDUCTOR LASERS;

EID: 21844471521     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.590463     Document Type: Conference Paper

References (11)

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