High brightness (1 W with M2=2.9) GaInAs/(AI)GaAs index guided quantum-dot tapered lasers at 980 nm with a high wavelength stability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5452, Issue , 2004, Pages 1-13

  Auzanneau, Sophie Charlotte ^a   Michel, Nicolas ^a   Calligaro, Michel ^a   Krakowski, Michel ^a   Deubert, Stefan ^b   Reithmaier, Johann Peter ^b   Forchel, Alfred ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

980 nm; GaInAs (Al)GaAs quantum dots; High brightness; Laser diode; Lasers array; M2; Wavelength stability

Indexed keywords

CURRENT DENSITY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE CONTROL; THRESHOLD VOLTAGE; WAVEGUIDES;

980 NM; GAINAS/(AL)GAAS QUANTUM DOTS; HIGH BRIGHTNESS; LASERS ARRAY; M2; WAVELENGTH STABILITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 12344302383     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.544642     Document Type: Conference Paper

References (10)

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