AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5732, Issue , 2005, Pages 197-204

  Yasan, Alireza ^a   McClintock, Ryan ^a   Mayes, Kathryn ^a   Kung, Patrick ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

AlGaN; Doping; Light emitting diode; MOCVD; Ultraviolet

Indexed keywords

ALGAN; FIELD EMISSION PATTERNS; MATERIAL QUALITY; MOLE FRACTION;

ALUMINUM NITRIDE; DOPING (ADDITIVES); ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; ULTRAVIOLET DEVICES;

LIGHT EMITTING DIODES;

EID: 21844440798     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.597078     Document Type: Conference Paper

References (13)

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