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Thin Solid Films

Volumn 486, Issue 1-2, 2005, Pages 182-185

MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates

(6) Sumi, A a Kim, Y K a Oshima, N b Akiyama, K c Saito, K d Funakubo, H a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b TOSOH CORPORATION (Japan)

c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY (Japan)

d BRUKER AXS INC (United States)

Author keywords

FeRAM; MOCVD; Perovskite type structure; SrIrO3

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; FERROELECTRICITY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS;

FERAM; PERVOSKITE-TYPE STRUCTURE; ROOM TEMPERATURE; SRIRO3;

THIN FILMS;

EID: 21844431871 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.11.244 Document Type: Conference Paper

Times cited : (22)

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