Local epitaxial growth of (103) one-axis-oriented SrBi2Ta2O9 thin films prepared at low deposition temperature by metalorganic chemical vapor deposition and their electrical properties

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5595-5598

  Nukaga, Norimasa ^a   Mitsuya, Masatoshi ^a   Suzuki, Toshimasa ^b   Nishi, Yuji ^b   Fujimoto, Masayuki ^b   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TAIYO YUDEN CO LTD   (Japan)

Author keywords

Direct preparation; Local epitaxial growth; Metalorganic chemical vapor deposition (MOCVD); One axis orientation; SBT

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRONTIUM COMPOUNDS;

REMANENT POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 0035455511     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5595     Document Type: Article

References (12)