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Volumn 67, Issue , 2004, Pages 41-48
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Effects of various oxidizers on the ZrO2 thin films deposited by atomic layer deposition
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Author keywords
ALD; Gate dielectrics; N2O; Zr tert butoxide; ZrO2
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTALLIZATION;
LEAKAGE CURRENTS;
OXIDATION;
REACTION KINETICS;
ZIRCONIA;
ALD;
GATE DIELECTRICS;
N2O;
ZR TERT-BUTOXIDE;
ZRO2;
FERROELECTRIC THIN FILMS;
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EID: 21744451995
PISSN: 10584587
EISSN: 16078489
Source Type: Conference Proceeding
DOI: 10.1080/10584580490898425 Document Type: Article |
Times cited : (9)
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References (14)
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