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Volumn 67, Issue , 2004, Pages 41-48

Effects of various oxidizers on the ZrO2 thin films deposited by atomic layer deposition

Author keywords

ALD; Gate dielectrics; N2O; Zr tert butoxide; ZrO2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; LEAKAGE CURRENTS; OXIDATION; REACTION KINETICS; ZIRCONIA;

EID: 21744451995     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490898425     Document Type: Article
Times cited : (9)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.