Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs)

Journal of Crystal Growth

Volumn 265, Issue 3-4, 2004, Pages 331-340

  Rudolph, P ^a   Frank Rotsch, Ch ^a   Juda, U ^a   Naumann, M ^a   Neubert, M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Cell structure; A1. Dislocation bunching; A1. Dislocation patterns; A1. Dissipative structuring; B1. GaAs

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); DISSOCIATION; DOPING (ADDITIVES); HEATING; INTERFACES (MATERIALS); SYNTHESIS (CHEMICAL); THERMOMECHANICAL TREATMENT; TURBULENCE;

CELL STRUCTURE; DISLOCATION BUNCHING; DISLOCATION PATTERN; DISSIPATIVE STRUCTURING; GAAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942537101     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.066     Document Type: Article

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