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Journal of Electronic Materials

Volumn 27, Issue 9, 1998, Pages 1047-1052

Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy

(6) Rujirawat, S a Smith, David J b Faurie, J P c Neu, G c Nathan, V d Sivananthan, S a

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b ARIZONA STATE UNIVERSITY (United States)

c CRHEA CNRS (France)

d AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

CdTe Si; Dislocations; Heteroepitaxy; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0342365623 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-998-0162-8 Document Type: Article

Times cited : (30)

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