Spacer design between source/drain and gate for high-performance FinFET devices

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 122-125

  Chen, Gang ^a   Huang, Ru ^a   Zhang, Xing ^a   Yang, Li ^a   Zhao, Dongyan ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

FinFET; Gate capacitance; High performance; Spacer design

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRIC LINES; POLYSILICON;

FINFET; GATE CAPACITANCE; HIGH PERFORMANCE; SPACER DESIGN;

MOSFET DEVICES;

EID: 21644487679     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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