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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 3, 2005, Pages 561-564

Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN

(3) Reddy, V R a Kim, S H b Seong, T Y b

a UNIVERSITY OF MYSORE (India)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; ANNEALING; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; HALL EFFECT; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SURFACE TREATMENT;

BUFFERED OXIDE ETCH (BOE); ELECTRON BEAM EVAPORATION; METAL DEPOSITION; SURFACE OXIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 21644482411 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2673-3 Document Type: Article

Times cited : (4)

References (21)

1
- 0026406592
- S. Nakamura, T. Mukai, S. Senoh: Jpn. J. Appl. Phys. 30, L1998 (1991)
- (1991) Jpn. J. Appl. Phys. , vol.30
- Nakamura, S.¹ Mukai, T.² Senoh, S.³

2
- 84883188181
- H. Amano, M. Kito, X. Hiramatsu, I. Akasaki: Jpn. J. Appl. Phys. 28, L2112(1998)
- (1998) Jpn. J. Appl. Phys. , vol.28
- Amano, H.¹ Kito, M.² Hiramatsu, X.³ Akasaki, I.⁴

3
- 21544461610
- H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Serdlov, M. Burns: J. Appl. Phys. 76, 1363 (1994)
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoc, H.¹ Strite, S.² Gao, G.B.³ Lin, M.E.⁴ Serdlov, B.⁵ Burns, M.⁶

4
- 0001446923
- M.A. Khan, M.S. Shur, Q. Chen: Appl. Phys. Lett. 68, 3022 (1996)
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3022
- Khan, M.A.¹ Shur, M.S.² Chen, Q.³

5
- 21544435375
- J.S. Foresi, T.D. Moustakas: Appl. Phys. Lett. 62, 2859 (1993)
- (1993) Appl. Phys. Lett. , vol.62 , pp. 2859
- Foresi, J.S.¹ Moustakas, T.D.²

6
- 36449003017
- M.E. Lin, F.Y. Hung, H. Morkoc: Appl. Phys. Lett. 64, 2557 (1994)
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2557
- Lin, M.E.¹ Hung, F.Y.² Morkoc, H.³

7
- 21544457842
- M.E. Lin, C. Ma, F.Y. Huang, Z.F. Fan, L.H. Allen, H. Morkoc: Appl. Phys. Lett. 64, 1003 (1994)
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1003
- Lin, M.E.¹ Ma, C.² Huang, F.Y.³ Fan, Z.F.⁴ Allen, L.H.⁵ Morkoc, H.⁶

8
- 0039149090
- J.S. Kwak, K.Y. Lee, J.Y. Han, J. Cho, O.H. Nam, Y. Pak: Appl. Phys. Lett. 79, 3254 (2001)
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3254
- Kwak, J.S.¹ Lee, K.Y.² Han, J.Y.³ Cho, J.⁴ Nam, O.H.⁵ Pak, Y.⁶

9
- 0036838330
- N.A. Papanocolaou, K. Zekentes: Solid-State Electron. 46, 1975 (2002)
- (2002) Solid-state Electron. , vol.46 , pp. 1975
- Papanocolaou, N.A.¹ Zekentes, K.²

10
- 0001246774
- B.P. Luther, S.E. Mohney, T.N. Jackson, M.A. Khan, Q. Chen, J.W. Yang: Appl. Phys. Lett. 70, 57 (1997)
- (1997) Appl. Phys. Lett. , vol.70 , pp. 57
- Luther, B.P.¹ Mohney, S.E.² Jackson, T.N.³ Khan, M.A.⁴ Chen, Q.⁵ Yang, J.W.⁶

11
- 5244252536
- M.W. Cole, D.W. Eckart, W.Y. Han, R.L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R.A. Stall, S.J. Pearton, Y. Li, Y. Lu: J. Appl. Phys. 80, 278 (1996)
- (1996) J. Appl. Phys. , vol.80 , pp. 278
- Cole, M.W.¹ Eckart, D.W.² Han, W.Y.³ Pfeffer, R.L.⁴ Monahan, T.⁵ Ren, F.⁶ Yuan, C.⁷ Stall, R.A.⁸ Pearton, S.J.⁹ Li, Y.¹⁰ Lu, Y.¹¹

12
- 0033528892
- A. Zeitouny, M. Eizenberg, S.J. Pearton, F. Ren: Mater. Sci. Eng. B 59, 358 (1999)
- (1999) Mater. Sci. Eng. B , vol.59 , pp. 358
- Zeitouny, A.¹ Eizenberg, M.² Pearton, S.J.³ Ren, F.⁴

13
- 0035087099
- N.A. Papanicolaou, M.V. Rao, J. Mittereder, W.T. Anderson: J. Vac. Sci. Technol. B 19, 261 (2001)
- (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 261
- Papanicolaou, N.A.¹ Rao, M.V.² Mittereder, J.³ Anderson, W.T.⁴

14
- 0036679147
- V. Kumar, L. Zhou, D. Selvanathan, I. Adesida: J. Appl. Phys. 92, 1712 (2002)
- (2002) J. Appl. Phys. , vol.92 , pp. 1712
- Kumar, V.¹ Zhou, L.² Selvanathan, D.³ Adesida, I.⁴

15
- 0020089025
- G.S. Marlow, M.B. Das: Solid-State Electron. 25, 91 (1982)
- (1982) Solid-state Electron. , vol.25 , pp. 91
- Marlow, G.S.¹ Das, M.B.²

16
- 35949011911
- D.W. Jenkins, J.D. Dow: Phys. Rev. B 39, 3317 (1989)
- (1989) Phys. Rev. B , vol.39 , pp. 3317
- Jenkins, D.W.¹ Dow, J.D.²

17
- 0001204411
- J. Sun, K.A. Rickert, J.M. Redwing, A.B. Ellis, F.J. Himpsel, T.F. Kuech: Appl. Phys. Lett. 76, 415 (2000)
- (2000) Appl. Phys. Lett. , vol.76 , pp. 415
- Sun, J.¹ Rickert, K.A.² Redwing, J.M.³ Ellis, A.B.⁴ Himpsel, F.J.⁵ Kuech, T.F.⁶

18
- 0032202230
- B.P. Luther, S.E. Mohney, T.N. Jackson: Semicond. Sci. Technol. 13, 1322 (1998)
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 1322
- Luther, B.P.¹ Mohney, S.E.² Jackson, T.N.³

19
- 0033328522
- C.A. Dimitriadis, T. Karakostas, S. Logothetidis, G. Kamarinos, J. Brini, G. Nouet: Solid-State Electron. 43, 1969 (1999)
- (1999) Solid-state Electron. , vol.43 , pp. 1969
- Dimitriadis, C.A.¹ Karakostas, T.² Logothetidis, S.³ Kamarinos, G.⁴ Brini, J.⁵ Nouet, G.⁶

20
- 0041924963
- J.O. Song, S.-H. Kim, J.S. Kwak, T.-Y Seong: Appl. Phys. Lett. 83, 1154 (2003)
- (2003) Appl. Phys. Lett. , vol.83 , pp. 1154
- Song, J.O.¹ Kim, S.-H.² Kwak, J.S.³ Seong, T.-Y.⁴

21
- 0000082345
- H.-K. Kim, S.H. Han, T.-Y. Seong, W.K. Choi: Appl. Phys. Lett. 77, 1647(2000)
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1647
- Kim, H.-K.¹ Han, S.H.² Seong, T.-Y.³ Choi, W.K.⁴

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