W and W/WSi/In1-xAlxN ohmic contacts to n-type GaN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 358-361

  Zeitouny, A ^a   Eizenberg, M ^a   Pearton, S J ^b   Ren, F ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ION IMPLANTATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; TEMPERATURE;

CONTACT RESISTIVITY; TRANSMISSION LINE MODEL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528892     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00383-3     Document Type: Article

References (9)

1. Cole M.W., Ren F., Pearton S.J., Li Y., Lu Y. J. Appl. Phys. 80:1996;278.
2. Vartuli C.B., Pearton S.J., Abernathy C.R. et al. J. Vac. Sci. Tech. B. 14:1996;3520.
3. Ren F. Pearton S.J. GaN and Related Materials. 1997;433-469 Gordon and Breach, New York.
4. Vartuli C.B., Pearton S.J., Abernathy C.R. et al. Solid-State Electron. 41:1997;531.
5. Cole M.W., Ren F., Pearton S.J. J. Electrochem. Soc. 144:1997;275.
6. Donovan M.S., MacKenzie J.D., Abernathy C.R. et al. Appl. Phys. Lett. 70:1997;2592.
7. Tansley T.L., Goldys E.M., Godlewski M., Zhou B., Zou H.Y. Pearton S.J. GaN and Related Materials. 1997;233-293 Gordon and Breach, New York.
8. Lester L.F., King D.J., Zhang L., Ramer J.C., Hersee S.D. Electrochem. Soc. Proc. 97:1996;170.
9. Marlow G.S., Das M.B. Solid-State Electron. 25:1982;91.