SOI planar photonic crystal fabrication: Etching through SiO 2/Si/SiO2 layer systems using fluorocarbon plasmas

Microelectronic Engineering

Volumn 81, Issue 1, 2005, Pages 15-21

  Milenin, A P ^a   Jamois, C ^a,c   Geppert, T ^a,b   Gosele U ^a   Wehrspohn, R B ^a,b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Anisotropy; Ar; Bowing; C4F8; CF 4; CHF3; Fluorocarbon; He; Photonic crystal; Plasma etching; Polymer deposition; SF6; Si; SiO2; SOI; Underetching

Indexed keywords

ANISOTROPY; CRYSTALS; ETCHING; OPTIMIZATION; PLASMAS; POLYMERS; SILICON COMPOUNDS; WAVEGUIDES;

C4F8; CF4; CHF3; FLUOROCARBON; PHOTONIC CRYSTALS; SF6; SIO2; UNDERETCHING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 21644478383     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.02.007     Document Type: Article

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