Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Toginho Filho, D O ^a   Dias, I F L ^a   Laureto, E ^a   Duarte, J L ^a   Loureno S A ^a   Poas L C ^a   Prabhu, S S ^b   Klem, J ^c  

^a STATE UNIVERSITY OF LONDRINA   (Brazil)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC POTENTIALS; EXCITONIC TRANSITIONS; MISCIBILITY GAPS; PAIR TRANSITIONS;

IMAGE INTENSIFIERS (SOLID STATE); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SOLUBILITY; SPECTRUM ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 21644477595     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923588     Document Type: Article

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