Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 83, Issue 13, 2003, Pages 2530-2532

  Noh, M S ^a   Dupuis, R D ^a   Bour, D P ^b   Walter, G ^c   Holonyak Jr , N ^c  

^a The University of Texas at Austin   (United States)

^b AGILENT TECHNOLOGIES   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSPARENCY;

CAVITY LENGTH;

QUANTUM WELL LASERS;

EID: 0142089059     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1615312     Document Type: Article

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