High reflectivity, low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror

Electronics Letters

Volumn 33, Issue 8, 1997, Pages 716-717

  Dias, I F L ^a,b   Nabet, B ^a   Kohl, A ^a   Harmand, J C ^a  

^a ORANGE LABS   (France)

^b STATE UNIVERSITY OF LONDRINA   (Brazil)

Author keywords

Vertical cavity surface emitting lasers

Indexed keywords

BANDWIDTH; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING;

DISTRIBUTED BRAGG REFLECTORS (DBR); MEAN ELECTRON CONCENTRATION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCELS);

MIRRORS;

EID: 0031124460     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970483     Document Type: Article

References (8)

1. EBELING, K.J.: 'Optical interconnects and data links with vertical surface emitting lasers diodes(VCSEL)'. Proc. 21st Eur. Conf. Opt. Commun., Brussels, 1995, p. 113
2. SALE, T.E.: 'Vertical cavity surface emitting lasers' (John Wiley & Sons Inc., 1995), Chap. 5, p. 129
3. PETERS, M.G., THIBEAULT, B.J., YOUNG, D.B., SCOTT, J.W., PETERS, F.H., GOSSARD, A.C., and COLDREN, L.A.: 'Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers', Appl. Phys. Lett., 1993, 63, (25), p. 3411
4. HARMAND, J.C., JEANNES, F., LEROUX, G., and JUHEL, M.: 'AlAsSb/ AlGaAsSb Bragg stacks for 1.55 μm wavelength grown by molecular beam epitaxy', Electron. Lett., 1995, 31, p. 1989
5. BLUM, O., HAFICH, M.J., KLEM, J.F., and LEAR, K.L.: 'Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers', Appl. Phys., 1995, 67, (22), p. 3233
6. SUBBANNA, S., TUTTLE, G., and KROEMER, H.: 'N-type doping of gallium antimonide and aluminum antimonide grown by molecular epitaxy using lead telluride as a tellurium dopant source', J. Electron. Mater., 1988, 17, p. 297
7. HARMAND, J.C., KOHL, A., JUHEL, M., and LEROUX, G.: 'Molecular beam epitaxy of AlGaAsSb system for 1.55μm Bragg mirrors'. To be published
8. EGLASH, S.J., CHOI, H.K., and TURNER, G.W.: 'MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers', J. Cryst. Growth. 1991, 111, p. 669