Diffusion barrier material for Cu metallization using ALD-WNxCy

Solid State Technology

Volumn 46, Issue 7, 2003, Pages 103-104+106

  Li, Wei Min ^a   Tuominen, Marko ^a   Haukka, Suvi ^a   Sprey, Hessel ^b   Raaijmakers, Ivo J ^c  

^a ASM Microchemistry Oy   (Finland)

^b ASM Process Application Development   (Belgium)

^c ASM International NV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEPOSITION; DIFFUSION; ELECTROMIGRATION; METALLIZING;

ATOMIC LAYER DEPOSITION; ULTRA THIN DIFFUSION BARRIER FILMS;

ULTRATHIN FILMS;

EID: 0041311135     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. International Technology Roadmap for Semiconductors, 2001.
2. A.E. Braun, Semiconductor International, p. 52, October 2001.
3. W.-M. Li, et al., Proceedings of the IEEE 2002 International Interconnect Technology Conference, Burlingame CA, p. 191, 2002.
4. S. Smith, et al., IEEE 2003 International Interconnect Technology Conference, Burlingame CA, 2003.
5. S. Haukka, et al., Proceedings of the IEEE 2002 International Interconnect Technology Conference, Burlingame CA, p. 279, 2002
6. W. Besling, et al., Proceedings of the IEEE 2002 International Interconnect Technology Conference, p. 288, 2002.