Performance of ALD WNxCy as a Cu barrier in oxide and porous low-k dual damascene structures

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 729-735

  Chen, L ^a   Book, G ^b   Smith, S ^c   Rasco, M ^d   Li, W M ^e   Kostamo, J ^e   Tuominen, M ^e   Pfeifer, K ^c   Iacoponi, J ^f  

^a TEXAS INSTRUMENTS   (United States)

^b INTEL CORPORATION   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

^d MOTOROLA INC   (United States)

^e Microchemistry Ltd   (Finland)

^f ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; DATA REDUCTION; DEPOSITION; DIELECTRIC MATERIALS; ELECTROMIGRATION; LOW TEMPERATURE EFFECTS;

BARRIER PROPERTIES; DIELECTRIC LINERS; DUAL DAMASCENE STRUCTURES; ELECTRICAL PROBES;

POROUS MATERIALS;

EID: 23844532978     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Smith, G, Book, W.M. Li, Y.M. Sun, P. Gillespie, M. Tuominen and K. Pfeifer, Proceedings of the International Interconnect Technology Conference (IITC) June, 2003, p. 135
2. T. Abell, D. Shamiryan, J. Schuhmacher, W. Besling, V. Sutcliffe, K. Maex, Proceedings of Advanced Metallization Conference (AMC) October, 2002, p. 717
3. G.W. Book, S. Smith and K. Pfeifer, Proceedings of Advanced Metallization Conference (AMC) October, 2002, p. 239