Comprehensive Electromigration studies on dual-damascene Cu interconnects with ALD WCxNy barriers

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 12-14

  Bruynseraede, C ^a   Fischer, A H ^b   Ungar, F ^b   Schumacher, J ^a   Sutcliffe, V ^c   Michelon, J ^d   Maex, K ^a,e  

^a IMEC   (Belgium)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c TEXAS INSTRUMENTS   (Belgium)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTRODEPOSITION; ELECTROMIGRATION; ELECTROPLATING; OPTIMIZATION; STRESS ANALYSIS; TEMPERATURE CONTROL; THICKNESS MEASUREMENT;

ATOMIC LAYER DEPOSITION (ALD); DEPOSITION BARRIER; PHYSICAL FAILURE ANALYSIS; TEMPERATURE COEFFICIENTS;

COPPER METALLURGY;

EID: 8644274108     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. E. Eelers et al., AMC 2001, p. 627
2. S. Smith et al., IITC 2003, pp. 135-137
3. E.T. Ogawa et al., IRPS 2001, pp. 341-349
4. A. von Glasow et al., IRPS 2003, pp. 126-131
5. R. Gonella et al., Tutorial at the Semicon 2002 Europe
6. A.H. Fischer et al, IITC 2003, pp. 253-255