Bipolar structure in thermally treated Czochralski silicon wafer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1129-1132

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Fan, Ruixin ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Annealing; Bipolar structure; Inner gettering; Oxygen precipitation; Silicon

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; OZONE; PRECIPITATION (CHEMICAL);

BIPOLAR STRUCTURES;

SILICON WAFERS;

EID: 0038518294     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1129     Document Type: Article

References (16)

1. J. Andrews: Mater. Res. Soc. Symp. Proc. 83 (1983) 133.
2. T. Yan, E. E. Garden and W. K. Tice: Appl. Phys. Lett. 30 (1977) 175.
3. P. K. Sinha and W. S. Glaunsinger: J. Mater. Res. 5 (1990) 1013.
4. D. Gilles and E. R. Weber: Phys. Rev. Lett. 64 (1990) 196.
5. M. Stavola, K. M. Lee, J. C. Nabity, P. E. Freeland and L. C. Kimerling: Phys. Rev. Lett. 54 (1985) 2639.
6. M. Needels, J. D. Joannopoulos, Y. Bar-Yam and S. T. Pantelides: Phys. Rev. B 43 (1991) 4208.
7. H. J. Stein and S. K. Hahn: J. Appl. Phys. 75 (1994) 3477.
8. R. Job, W. R. Fahrner and A. G. Ulyashin: Mat. Sci. Eng. B 73 (2000) 197.
9. H. J. Ruitz and G. P. Pollack: J. Electrochem. Soc. 125 (1978) 128.
10. W. Kaiser, H. L. Frisch and H. Reiss: Phys. Rev. 112 (1958) 1546.
11. C. A. Londos, M. J. Binns, A. R. Brown, S. A. MCQuaid and R. C. Newman: Appl. Phys. Lett. 62 (1993) 1525.
12. A. G. Ulyashin, R. Job, I. A. Khorunzhii and W. R. Fahrner: Physica B 308-310 (2001) 185.
13. A. G. Ulyashin, I. A. Khorunzhii, R. Job and W. R. Fahrner: Mater. Sci. Eng. B 73 (2000) 124.
14. X. Ma, X. Yu, R. Fan and D. Yang: Appl. Phys. Lett. 81 (2002) 496.
15. V. V. Voronkov and R. Falster: J. Cryst. Growth 202 (1999) 462.
16. H. J. Ruitz and G. P. Pollack: J. Electrochem. Soc. 125 (1978) 128.