Oxidation-induced stacking faults and related grown-in oxygen precipitates in nitrogen-doped Czochralski silicon

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 393-397

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Shen, Yejun ^a   Tian, Daxi ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; OXIDATION; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; STACKING FAULTS;

CZOCHRALSKI SILICON; OXIDATION INDUCED STACKING FAULTS; OXYGEN PRECIPITATES;

SEMICONDUCTING SILICON;

EID: 0037392489     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/334     Document Type: Article

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