Effect of rapid thermal process on oxygen precipitation and denuded zone in nitrogen-doped silicon wafers

Microelectronic Engineering

Volumn 69, Issue 1, 2003, Pages 97-104

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Czochralski silicon; Denuded zone; Nitrogen doping; Oxygen precipitation; Rapid thermal process

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); NITROGEN; OXYGEN; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING;

DENUDED ZONES (DZ);

SILICON WAFERS;

EID: 0038035203     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00276-4     Document Type: Article

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