High brightness GalnAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2238-2240

  Auzanneau, Sophie Charlotte ^a   Calligaro, Michel ^a   Krakowski, Michel ^a   Klopf, Frank ^b   Deubert, Stefan ^b   Reithmaier, Johann Peter ^b   Forchel, Alfred ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CARRIER CONCENTRATION; CHARGE COUPLED DEVICES; LASER BEAMS; MOLECULAR BEAM EPITAXY; POWER AMPLIFIERS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; THERMAL EFFECTS;

BRAGG REFLECTORS; ELECTRICAL CONFINEMENT; QUANTUM-DOT LASERS; TAPERED LASERS;

LASERS;

EID: 2142708705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650913     Document Type: Article

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