Theory of the strain-symmetrized silicon-based Ge-Si superlattice laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 6, 1998, Pages 1029-1033

  Friedman, Lionel ^b   Soref, Richard A ^a,b   Sun, Gregory ^c   Lu, Yanwu ^c  

^a IEEE

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

Author keywords

Ge; Mid infra red lasers; Semiconductor lasers; Si; Superlattices

Indexed keywords

COMPUTATIONAL METHODS; CURRENT DENSITY; FUNCTIONS; INFRARED DEVICES; METALLIC SUPERLATTICES; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STRAIN;

STRAIN SYMMETRIZATION;

SEMICONDUCTOR LASERS;

EID: 0032207905     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.736106     Document Type: Article

References (9)

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