Electrical properties of ZrO2 thin films doped with ln2o3 by sol-gel method

Key Engineering Materials

Volumn 169-170, Issue , 1999, Pages 175-178

  Ohya, Y ^a,b   Murayama, M ^a   Takahashi, Y ^a  

^a GIFU UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

Electrical conductivity; Ion transference number; Sol gel method; Thin film; Zro2 ln2o3

Indexed keywords

COATING TECHNIQUES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS; NITROGEN COMPOUNDS; SOL-GELS; SOLID SOLUTIONS; STABILIZERS (AGENTS); THIN FILMS; ZIRCONIA;

DIP COATING; INDIUM OXIDE; ION TRANSFERENCE NUMBER;

CERAMIC COATINGS;

EID: 0032624435     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: None     Document Type: Article

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