Effects of channel thinning on threshold voltage shift in ultrathin-body silicon nanocrystal memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2608-2611

  Yanagidaira, Kosuke ^b   Saitoh, Masumi ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CHUO UNIVERSITY   (Japan)

Author keywords

Silicon nanocrystal memory; Silicon on insulator; Threshold voltage distibution; Threshold voltage shift; Ultrathin body

Indexed keywords

DATA STORAGE EQUIPMENT; NANOSTRUCTURED MATERIALS; SILICON; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; ULTRATHIN FILMS; VOLTAGE DISTRIBUTION MEASUREMENT;

SILICON NANOCRYSTAL MEMORY; THRESHOLD VOLTAGE DISTRIBUTION; THRESHOLD VOLTAGE SHIFT; ULTRATHIN BODY;

ELECTRIC POTENTIAL;

EID: 21244465474     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2608     Document Type: Conference Paper

References (15)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé and K. Chan: Appl. Phys. Lett. 68 (1996) 1377.
2. Y. Shi, K. Saito, H. Ishikuro and T. Hiramoto: J. Appl. Phys. 84 (1998) 2358.
3. I. Kim, S. Han, K. Han, J. Lee and H. Shin: IEEE Electron Device Lett. 20 (1999) 630.
4. R. Muralidhar et al.: IEEE Int. Electron Devices Meeting Tech. Dig. (2003) p. 601.
5. I.-G. Kim, K. Yanagidaira and T. Hiramoto: IEEE Electron Device Lett. 25 (2004) 265.
6. R. Ohba, N. Sugiyama, K. Uchida, J. Koga and A. Toriumi: IEEE Trans. Electron Devices 49 (2002) 1392.
7. M. L. Ostraat, J. W. De Blauwe, M. L. Green, L. D. Bell, M. L. Brongersma, J. Casperson, R. C. Flagan and H. A. Atwater: Appl. Phys. Lett. 79 (2001) 433.
8. M. Saitoh, E. Nagata and T. Hiramoto: Appl. Phys. Lett. 82 (2003) 1787.
9. J. Brault, M. Saitoh and T. Hiramoto: IEEE Silicon Nanoelectronics Workshop (2004) p. 103.
10. E. Nagata, N. Takahashi, Y. Yasuda, T. Inukai, H. Ishikuro and T. Hiramoto: Jpn. J. Appl. Phys. 38 (1999) 7230.
11. K. Yanagidaira, M. Saitoh and T. Hiramoto: IEEE Silicon Nanoelectronics Workshop (2004) p. 141.
12. F. Mazen, T. Baron, G. Breḿond, N. Buffet, N. Rochat, P. Mur and M. N. Séméria: J. Electrochem. Soc. 150 (2003) G203.
13. S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda and M. Hirose: Thin Solid Films 369 (2000) 55.
14. M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose: Appl. Phys. Lett. 70 (1997) 2291.
15. H. Majima, H. Ishikuro and T. Hiramoto: IEEE Electron Device Lett. 21 (2000) 396.