Characteristic distributions of narrow channel metal-oxide-semiconductor field-effect transistor memories with silicon nanocrystal floating gates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7230-7232

  Nagata, Eiji ^a,b   Takahashi, Nobuyoshi ^a   Yasuda, Yuri ^a,b   Inukai, Takashi ^a   Ishikuro, Hiroki ^a   Hiramoto, Toshiro ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CHUO UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Floating gate; MOSFET memory; Silicon dots; Threshold voltage shift; Unit cell

Indexed keywords

GATES (TRANSISTOR); MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

FLOATING GATES;

SEMICONDUCTOR STORAGE;

EID: 0033334438     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7230     Document Type: Article

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