Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics

Journal of Non-Crystalline Solids

Volumn 351, Issue 21-23, 2005, Pages 1911-1918

  Munteanu, D ^a   Autran, J L ^a,b   Harrison, S ^a,c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COMMUNICATION; CHANNEL CAPACITY; COMPOSITION; DIELECTRIC MATERIALS; PERMITTIVITY; POISSON EQUATION; QUANTUM THEORY; THRESHOLD VOLTAGE;

GATE DIELECTRICS; QUANTUM SHORT CHANNEL; SEMICONDUCTOR FIELD EFFECT; UNDOPED FILMS;

MOSFET DEVICES;

EID: 21144455405     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.04.037     Document Type: Conference Paper

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