An analytical subthreshold current model for ballistic double-gate MOSFETs

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 171-174

  Autran, J L ^a,b   Munteanu, D ^a   Tintori, O ^a   Aubert, M ^a   Decarre, E ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

Analytical modeling; Ballistic transport; Double gate devices; Subthreshold current model

Indexed keywords

ANALYTICAL MODELING; BALLISTIC TRANSPORT; DOUBLE-GATE DEVICES; SUBTHRESHOLD CURRENT MODEL;

APPROXIMATION THEORY; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); POISSON DISTRIBUTION; SILICON; THIN FILMS;

MOSFET DEVICES;

EID: 6344246160     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. K. Natori, J. Appl. Phys. 76, 4879 (1994).
2. A. Rahman, M.S. Lundstrom, IEEE Trans. Electron Dev. 49, 481 (2002).
3. Y. Naveh, K.K. Likharev, IEEE Electron Dev. Lett. 21, 242 (2000).
4. D.K. Ferry, S.M. Goodnick, Transport in nanostructures. Cambridge University Press; 1997.
5. C. Cohen-Tannoudji, B. Diu, F. Laloë, Quantum mechanic, Hermann, Paris (1992).
6. D. Munteanu, J.L. Autran, Solid-State Electron. 47, 1219 (2003).
7. J. Guo, M.S. Lundstrom, IEEE Trans. Electron Dev. 49, 1897 (2002).